SK Hynix’s DRAM memory chip roadmap for the next 30-years includes 4F2VG (vertical gate) technology to improve DRAM chips and overcome manufacturing challenges, with 3D DRAM as the main driver of future growth, it said.
-4F2VG minimizes cell area in DRAM for high-integration, high speed, low power operation via the vertical gate structure. It will also help scale below 10nm in mfg.-3D DRAM: Innovation will overcome rising costs caused by stacked layers. #SKhynix #DRAM #semiconductors #semiconductorSource: Dan Nystedt
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